Loading...

256 DRAM 1

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
SMJ4416-15JDL by Texas Instruments

SMJ4416-15JDL

Texas Instruments

SMJ4416-15JDL by Texas Instruments is a 16KX4 PAGE MODE DRAM with 16384 words, operating at 5V. It features 3-STATE output, asynchronous mode, and common I/O type. Ideal for applications requiring fast access times and high memory density in commercial temperature environments.

PAGE

150 ns

RAS ONLY REFRESH

COMMON

R-CDIP-T18

22.606 mm

65536 bit

PAGE MODE DRAM

4

1

1

18

16384 words

16K

ASYNCHRONOUS

70 Cel

0 Cel

16KX4

3-STATE

CERAMIC, METAL-SEALED COFIRED

DIP

DIP18,.3

RECTANGULAR

IN-LINE

NOT SPECIFIED

5

Not Qualified

256

38535Q/M;38534H;883B

5.08 mm

DRAMs

5.5 V

4.5 V

5

NO

NMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

7.62 mm