Loading...

DIE DRAM 1

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT46H32M32LFT68MWC2 by Micron Technology

MT46H32M32LFT68MWC2

Micron Technology

LPDDR1 DRAM; Package Code: DIE; Package Shape: RECTANGULAR; Package Style (Meter): UNCASED CHIP; Minimum Supply Voltage (Vsup): 1.7 V; No. of Words Code: 32M;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-XUUC-N

1073741824 bit

LPDDR1 DRAM

32

1

1

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

3-STATE

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

YES

2,4,8,16

1.95 V

1.7 V

1.8

YES

CMOS

NO LEAD

UPPER