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60 DRAM 174

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT46V32M16BN-6:C by Micron Technology

MT46V32M16BN-6:C

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-75:C by Micron Technology

MT46V32M16BN-75:C

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-75IT:C by Micron Technology

MT46V32M16BN-75IT:C

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-75L:C by Micron Technology

MT46V32M16BN-75L:C

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-5B:C by Micron Technology

MT46V32M16FN-5B:C

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-6:C by Micron Technology

MT46V32M16FN-6:C

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-6IT:C by Micron Technology

MT46V32M16FN-6IT:C

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

235

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

Tin/Lead/Silver (Sn/Pb/Ag)

BALL

1 mm

BOTTOM

30

10 mm

MT46V32M16FN-75:C by Micron Technology

MT46V32M16FN-75:C

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-75IT:C by Micron Technology

MT46V32M16FN-75IT:C

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-75L:C by Micron Technology

MT46V32M16FN-75L:C

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V32M8FG-6L:G by Micron Technology

MT46V32M8FG-6L:G

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e0

14 mm

268435456 bit

DDR1 DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

410 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

8 mm

MT46V64M4FG-75:G by Micron Technology

MT46V64M4FG-75:G

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e0

14 mm

268435456 bit

DDR1 DRAM

4

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX4

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

365 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

8 mm

MT46V64M8BN-5B:D by Micron Technology

MT46V64M8BN-5B:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

450 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V64M8BN-75L:D by Micron Technology

MT46V64M8BN-75L:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V64M8FN-75:D by Micron Technology

MT46V64M8FN-75:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V64M8FN-75IT:D by Micron Technology

MT46V64M8FN-75IT:D

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT47H32M8BP-37V:B by Micron Technology

MT47H32M8BP-37V:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: LFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.5 ns

AUTO/SELF REFRESH

266 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

268435456 bit

DDR2 DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

LFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1.3 mm

YES

4,8

.005 Amp

DRAMs

280 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H32M8BP-5E:B by Micron Technology

MT47H32M8BP-5E:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.6 ns

AUTO/SELF REFRESH

200 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

268435456 bit

DDR2 DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.005 Amp

DRAMs

230 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC16M8A2BB-75:G by Micron Technology

MT48LC16M8A2BB-75:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B60

e1

16 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

310 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC16M8A2BB-75IT:G by Micron Technology

MT48LC16M8A2BB-75IT:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B60

e1

16 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

60

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

310 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC16M8A2FB-7E:G by Micron Technology

MT48LC16M8A2FB-7E:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B60

e0

16 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

330 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

8 mm

MT48LC32M8A2BB-75:D by Micron Technology

MT48LC32M8A2BB-75:D

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B60

e1

16 mm

268435456 bit

SYNCHRONOUS DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

125 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC32M8A2BB-75L:D by Micron Technology

MT48LC32M8A2BB-75L:D

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B60

e1

16 mm

268435456 bit

SYNCHRONOUS DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

270 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46V16M16FG-6L:F by Micron Technology

MT46V16M16FG-6L:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PBGA-B60

e0

14 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

440 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

8 mm

MT48LC32M8A2BB-75IT:D by Micron Technology

MT48LC32M8A2BB-75IT:D

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B60

e1

16 mm

268435456 bit

SYNCHRONOUS DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

270 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT47H128M4CB-37E:B by Micron Technology

MT47H128M4CB-37E:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.5 ns

AUTO/SELF REFRESH

266 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

536870912 bit

DDR2 DRAM

4

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

225 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10 mm

MT47H128M4CB-3:B by Micron Technology

MT47H128M4CB-3:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

536870912 bit

DDR2 DRAM

4

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

240 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10 mm

MT47H64M8CB-37E:B by Micron Technology

MT47H64M8CB-37E:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.5 ns

AUTO/SELF REFRESH

266 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

225 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10 mm

MT47H64M8CB-37V:B by Micron Technology

MT47H64M8CB-37V:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.5 ns

AUTO/SELF REFRESH

267 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.006 Amp

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT47H64M8CB-3:B by Micron Technology

MT47H64M8CB-3:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

240 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT47H64M8CB-5E:B by Micron Technology

MT47H64M8CB-5E:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.6 ns

AUTO/SELF REFRESH

200 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

220 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT47H64M8CB-25:B by Micron Technology

MT47H64M8CB-25:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

300 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT47H64M8CB-37EIT:B by Micron Technology

MT47H64M8CB-37EIT:B

Micron Technology

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.5 ns

AUTO/SELF REFRESH

266 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

225 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10 mm

MT47H64M8CB-5EIT:B by Micron Technology

MT47H64M8CB-5EIT:B

Micron Technology

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.6 ns

AUTO/SELF REFRESH

200 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

220 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10 mm

MT46V128M4BN-6:F by Micron Technology

MT46V128M4BN-6:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

4

1

1

60

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX4

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-5B:F by Micron Technology

MT46V32M16BN-5B:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-5BIT:F by Micron Technology

MT46V32M16BN-5BIT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-5BLIT:F by Micron Technology

MT46V32M16BN-5BLIT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-6IT:F by Micron Technology

MT46V32M16BN-6IT:F

Micron Technology

Micron Technology's MT46V32M16BN-6IT:F is a DDR1 DRAM with 32MX16 organization, operating at 166 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-5B:F by Micron Technology

MT46V32M16FN-5B:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-6:F by Micron Technology

MT46V32M16FN-6:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-6IT:F by Micron Technology

MT46V32M16FN-6IT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

235

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

Tin/Lead/Silver (Sn/Pb/Ag)

BALL

1 mm

BOTTOM

30

10 mm

MT46V64M8BN-5B:F by Micron Technology

MT46V64M8BN-5B:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

450 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

10 mm

MT46V64M8BN-6:F by Micron Technology

MT46V64M8BN-6:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V64M8BN-6IT:F by Micron Technology

MT46V64M8BN-6IT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

10 mm

MT46V64M8BN-6L:F by Micron Technology

MT46V64M8BN-6L:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V64M8FN-6IT:F by Micron Technology

MT46V64M8FN-6IT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

235

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

Tin/Lead/Silver (Sn/Pb/Ag)

BALL

1 mm

BOTTOM

30

10 mm

MT46H8M16LFCF-10IT by Micron Technology

MT46H8M16LFCF-10IT

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

7 ns

AUTO/SELF REFRESH

104 MHz

COMMON

2,4,8

R-PBGA-B60

e1

10 mm

134217728 bit

DDR1 DRAM

16

1

1

60

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

2,4,8

.0002 Amp

DRAMs

100 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm