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44 DRAM 1

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
TMS626402-12DGE by Texas Instruments

TMS626402-12DGE

Texas Instruments

TMS626402-12DGE by Texas Instruments is a 4MX4 Synchronous DRAM with 16777216 bit memory density. Operating at 3.3V, it offers dual bank page burst access mode and self-refresh capability. Ideal for commercial applications requiring high-speed data processing in compact devices.

DUAL BANK PAGE BURST

CAS BEFORE RAS/SELF REFRESH

R-PDSO-G44

18.41 mm

16777216 bit

SYNCHRONOUS DRAM

4

1

1

44

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX4

3-STATE

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

4096

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm