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366 DRAM 2

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT53E512M64D4NK-046WT:D by Micron Technology

MT53E512M64D4NK-046WT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 366; Package Code: VFBGA; Package Shape: SQUARE; Maximum Supply Current: 360 mA; Additional Features: SELF REFRESH; IT ALSO REQUIRES 1.8V NOM;

MULTI BANK PAGE BURST

3.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

16,32

S-PBGA-B366

15 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

366

536870912 words

512M

SYNCHRONOUS

85 Cel

-25 Cel

512MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA366,29X29,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.7 mm

YES

16,32

360 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.5 mm

BOTTOM

15 mm

MT53E512M64D4NK-053WT:D by Micron Technology

MT53E512M64D4NK-053WT:D

Micron Technology

Micron Technology's MT53E512M64D4NK-053WT:D is a LPDDR4 DRAM with 512MX64 organization, operating at 1866 MHz. It features a very thin profile, fine pitch grid array package style and supports multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in compact devices.

MULTI BANK PAGE BURST

3.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1866 MHz

COMMON

16,32

S-PBGA-B366

15 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

366

536870912 words

512M

SYNCHRONOUS

85 Cel

-25 Cel

512MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA366,29X29,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.7 mm

YES

16,32

300 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.5 mm

BOTTOM

15 mm