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253 DRAM 8

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT42L256M64D4EV-18WT:A by Micron Technology

MT42L256M64D4EV-18WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

533 MHz

COMMON

4,8,16

S-PBGA-B253

e1

11 mm

17179869184 bit

LPDDR2 DRAM

64

1

1

253

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA253,17X17,20

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

1.2 mm

YES

4,8,16

.002 Amp

DRAMs

220 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

11 mm

MT42L256M64D4EV-25WT:A by Micron Technology

MT42L256M64D4EV-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

400 MHz

COMMON

4,8,16

S-PBGA-B253

11 mm

17179869184 bit

LPDDR2 DRAM

64

1

1

253

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA253,17X17,20

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

1.2 mm

YES

4,8,16

.002 Amp

DRAMs

194 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

11 mm

EDF8164A3MA-GD-F-D by Micron Technology

EDF8164A3MA-GD-F-D

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B253

11 mm

8589934592 bit

LPDDR3 DRAM

64

1

1

253

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.85 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

11 mm

EDFA164A2MA-GD-F-D by Micron Technology

EDFA164A2MA-GD-F-D

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Length: 11 mm;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B253

11 mm

17179869184 bit

LPDDR3 DRAM

64

1

1

253

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

11 mm

EDFA164A2MA-JD-F-D by Micron Technology

EDFA164A2MA-JD-F-D

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.14 V;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B253

11 mm

17179869184 bit

LPDDR3 DRAM

64

1

1

253

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

11 mm

EDFA364A3MA-GD-F-D by Micron Technology

EDFA364A3MA-GD-F-D

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; No. of Functions: 1;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B253

12.5 mm

17179869184 bit

LPDDR3 DRAM

64

1

1

253

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.85 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12.5 mm

EDFB164A1MA-GD-F-D by Micron Technology

EDFB164A1MA-GD-F-D

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Terminal Position: BOTTOM;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B253

12.5 mm

34359738368 bit

LPDDR3 DRAM

64

1

1

253

536870912 words

512M

SYNCHRONOUS

85 Cel

-30 Cel

512MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.95 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

12.5 mm

EDFB164A1MA-JD-F-D by Micron Technology

EDFB164A1MA-JD-F-D

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Self Refresh: YES;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B253

12.5 mm

34359738368 bit

LPDDR3 DRAM

64

1

1

253

536870912 words

512M

SYNCHRONOUS

85 Cel

-30 Cel

512MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.95 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

12.5 mm