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216 DRAM 24

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT42L128M64D4KJ-25IT:A by Micron Technology

MT42L128M64D4KJ-25IT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Minimum Operating Temperature: -25 Cel;

MULTI BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

S-PBGA-B216

e1

12 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

216

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

Not Qualified

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.4 mm

BOTTOM

30

12 mm

MT42L128M64D4KJ-3IT:A by Micron Technology

MT42L128M64D4KJ-3IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Additional Features: SELF REFRESH; IT ALSO REQUIRES 1.2V NOM; No. of Words Code: 128M;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

MT42L64M64D2KH-25IT:A by Micron Technology

MT42L64M64D2KH-25IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.7 V; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B216

12 mm

4294967296 bit

LPDDR2 DRAM

64

1

1

216

67108864 words

64M

SYNCHRONOUS

64MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

MT42L64M64D2KH-3IT:A by Micron Technology

MT42L64M64D2KH-3IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS; No. of Ports: 1;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B216

12 mm

4294967296 bit

LPDDR2 DRAM

64

1

1

216

67108864 words

64M

SYNCHRONOUS

64MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

MT42L128M32D1LH-25WT:A by Micron Technology

MT42L128M32D1LH-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

400 MHz

COMMON

4,8,16

S-PBGA-B216

12 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

216

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA216,29X29,16

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.65 mm

YES

4,8,16

.0001 Amp

DRAMs

194 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.4 mm

BOTTOM

12 mm

MT42L128M64D2LL-18WT:A by Micron Technology

MT42L128M64D2LL-18WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

533 MHz

COMMON

4,8,16

S-PBGA-B216

e1

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA216,29X29,16

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.8 mm

YES

4,8,16

.002 Amp

DRAMs

220 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

12 mm

MT42L128M64D2LL-25WT:A by Micron Technology

MT42L128M64D2LL-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

400 MHz

COMMON

4,8,16

S-PBGA-B216

e1

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA216,29X29,16

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.8 mm

YES

4,8,16

.002 Amp

DRAMs

194 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

12 mm

MT42L256M32D2LK-18WT:A by Micron Technology

MT42L256M32D2LK-18WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

533 MHz

COMMON

4,8,16

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

216

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA216,29X29,16

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.8 mm

YES

4,8,16

.0001 Amp

DRAMs

220 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.4 mm

BOTTOM

12 mm

MT42L256M64D4LM-18WT:A by Micron Technology

MT42L256M64D4LM-18WT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH; Terminal Form: BALL;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B216

12 mm

17179869184 bit

LPDDR2 DRAM

64

1

1

216

268435456 words

256M

SYNCHRONOUS

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

MT42L256M64D4LM-25WT:A by Micron Technology

MT42L256M64D4LM-25WT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; No. of Words Code: 256M; Terminal Finish: TIN SILVER COPPER;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B216

e1

12 mm

17179869184 bit

LPDDR2 DRAM

64

1

1

216

268435456 words

256M

SYNCHRONOUS

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

12 mm

MT42L384M32D3LP-18WT:A by Micron Technology

MT42L384M32D3LP-18WT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Terminal Pitch: .4 mm; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B216

12 mm

12884901888 bit

LPDDR2 DRAM

32

1

1

216

402653184 words

384M

SYNCHRONOUS

384MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.82 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

MT42L384M32D3LP-25WT:A by Micron Technology

MT42L384M32D3LP-25WT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Organization: 384MX32; No. of Words Code: 384M;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B216

12 mm

12884901888 bit

LPDDR2 DRAM

32

1

1

216

402653184 words

384M

SYNCHRONOUS

384MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.82 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

EDF8164A3PK-JD-F-D by Micron Technology

EDF8164A3PK-JD-F-D

Micron Technology

LPDDR3 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Access Mode: SINGLE BANK PAGE BURST; Operating Mode: SYNCHRONOUS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

8589934592 bit

LPDDR3 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.7 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

EDF8164A3PK-JD-F-R by Micron Technology

EDF8164A3PK-JD-F-R

Micron Technology

LPDDR3 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Maximum Seated Height: .7 mm; Package Body Material: PLASTIC/EPOXY;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

8589934592 bit

LPDDR3 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.7 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

EDFA164A2PK-GD-F-D by Micron Technology

EDFA164A2PK-GD-F-D

Micron Technology

LPDDR3 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; JESD-30 Code: S-PBGA-B216; No. of Words: 268435456 words;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

17179869184 bit

LPDDR3 DRAM

64

1

1

216

268435456 words

256M

SYNCHRONOUS

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

EDFA164A2PK-JD-F-D by Micron Technology

EDFA164A2PK-JD-F-D

Micron Technology

LPDDR3 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Organization: 256MX64; Memory Width: 64;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

17179869184 bit

LPDDR3 DRAM

64

1

1

216

268435456 words

256M

SYNCHRONOUS

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

EDB8164B4PR-1D-F-D by Micron Technology

EDB8164B4PR-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; Terminal Position: BOTTOM;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

EDB8164B4PT-1D-F-D by Micron Technology

EDB8164B4PT-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; Minimum Supply Voltage (Vsup): 1.14 V;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

EDB8164B4PT-1DAT-F-D by Micron Technology

EDB8164B4PT-1DAT-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Technology: CMOS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

NOT SPECIFIED

12 mm

EDB8164B4PT-1DAT-F-R by Micron Technology

EDB8164B4PT-1DAT-F-R

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; No. of Words: 134217728 words; Maximum Seated Height: .8 mm;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

EDB8164B4PT-1DIT-F-D by Micron Technology

EDB8164B4PT-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Length: 12 mm;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.95 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.4 mm

BOTTOM

12 mm

EDBA164B2PR-1D-F-D by Micron Technology

EDBA164B2PR-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Surface Mount: YES; Terminal Form: BALL;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

17179869184 bit

LPDDR2 DRAM

64

1

1

216

268435456 words

256M

SYNCHRONOUS

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

NOT SPECIFIED

12 mm

MT52L256M64D2LZ-107XT:B by Micron Technology

MT52L256M64D2LZ-107XT:B

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Self Refresh: YES;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

933 MHz

COMMON

S-PBGA-B216

12 mm

17179869184 bit

LPDDR3 DRAM

64

1

1

216

268435456 words

256M

SYNCHRONOUS

105 Cel

-30 Cel

256MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA216,29X29,16

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

.012 Amp

320 mA

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.4 mm

BOTTOM

12 mm

MT52L256M64D2PP-107WT:B by Micron Technology

MT52L256M64D2PP-107WT:B

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Organization: 256MX64;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

CONFIGURABLE

S-PBGA-B216

12 mm

17179869184 bit

LPDDR3 DRAM

64

1

1

216

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX64

COMMON

PLASTIC/EPOXY

VFBGA

BGA216,12X12,16

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NO

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.4 mm

BOTTOM

12 mm