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144 DRAM 90

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT16LSDF6464HG-13ED2 by Micron Technology

MT16LSDF6464HG-13ED2

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

5.4 ns

143 MHz

COMMON

R-PDMA-N144

4294967296 bit

SYNCHRONOUS DRAM MODULE

64

144

67108864 words

64M

70 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM144,32

RECTANGULAR

MICROELECTRONIC ASSEMBLY

3.3

Not Qualified

8192

.032 Amp

DRAMs

4560 mA

3.3

NO

CMOS

COMMERCIAL

NO LEAD

.8 mm

DUAL

MT49H32M18CBM-18:B by Micron Technology

MT49H32M18CBM-18:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Additional Features: AUTO REFRESH; Peak Reflow Temperature (C): 260;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

Not Qualified

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

11 mm

UPD48576209FF-E33-DW1-A by Renesas Electronics

UPD48576209FF-E33-DW1-A

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Access Time: .35 ns; Input/Output Type: COMMON;

MULTI BANK PAGE BURST

.35 ns

AUTO REFRESH

300 MHz

COMMON

R-PBGA-B144

18.5 mm

603979776 bit

DDR1 DRAM

9

1

1

144

67108864 words

64M

SYNCHRONOUS

64MX9

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.17 mm

2,4,8

.055 Amp

DRAMs

716 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

UPD48576218FF-E18-DW1-A by Renesas Electronics

UPD48576218FF-E18-DW1-A

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 603979776 bit; Maximum Standby Current: .055 Amp;

MULTI BANK PAGE BURST

.22 ns

AUTO REFRESH

533 MHz

COMMON

R-PBGA-B144

18.5 mm

603979776 bit

DDR1 DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.17 mm

2,4,8

.055 Amp

DRAMs

1078 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

UPD48576218FF-E33-DW1-A by Renesas Electronics

UPD48576218FF-E33-DW1-A

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Length: 18.5 mm; Package Equivalence Code: BGA144,12X18,40/32;

MULTI BANK PAGE BURST

.35 ns

AUTO REFRESH

300 MHz

COMMON

R-PBGA-B144

18.5 mm

603979776 bit

DDR1 DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.17 mm

2,4,8

.055 Amp

DRAMs

716 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

UPD48576236FF-E18-DW1-A by Renesas Electronics

UPD48576236FF-E18-DW1-A

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA144,12X18,40/32; Length: 18.5 mm;

MULTI BANK PAGE BURST

.22 ns

AUTO REFRESH

533 MHz

COMMON

R-PBGA-B144

18.5 mm

603979776 bit

DDR1 DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.17 mm

2,4,8

.055 Amp

DRAMs

1105 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

UPD48576218FF-E24-DW1 by Renesas Electronics

UPD48576218FF-E24-DW1

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE; Maximum Seated Height: 1.17 mm;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

603979776 bit

DDR1 DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.17 mm

2,4,8

.055 Amp

DRAMs

872 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

UPD48576236FF-E24-DW1 by Renesas Electronics

UPD48576236FF-E24-DW1

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 400 MHz; Terminal Form: BALL;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

603979776 bit

DDR1 DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.5/1.8,1.8,2.5

Not Qualified

1.17 mm

2,4,8

.055 Amp

DRAMs

891 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT49H16M36BM-18:B by Micron Technology

MT49H16M36BM-18:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

533 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

885 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT49H16M36BM-18IT:B by Micron Technology

MT49H16M36BM-18IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

533 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

885 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT49H16M36BM-25:B by Micron Technology

MT49H16M36BM-25:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT49H16M36BM-25E:B by Micron Technology

MT49H16M36BM-25E:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT49H16M36BM-25IT:B by Micron Technology

MT49H16M36BM-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

11 mm

MT49H16M36BM-33:B by Micron Technology

MT49H16M36BM-33:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

300 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

565 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

11 mm

MT49H16M36FM-18:B by Micron Technology

MT49H16M36FM-18:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-609 Code: e0;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

533 MHz

COMMON

R-PBGA-B144

e0

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

885 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Lead/Silver (Sn/Pb/Ag)

BALL

1 mm

BOTTOM

11 mm

MT49H16M36FM-25:B by Micron Technology

MT49H16M36FM-25:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words Code: 16M;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e0

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Lead/Silver (Sn/Pb/Ag)

BALL

1 mm

BOTTOM

11 mm

MT49H16M36FM-25E:B by Micron Technology

MT49H16M36FM-25E:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e0

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

700 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

11 mm

MT49H32M18BM-18:B by Micron Technology

MT49H32M18BM-18:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Organization: 32MX18;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

533 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

830 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

11 mm

MT49H32M18BM-25:B by Micron Technology

MT49H32M18BM-25:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

11 mm

MT49H32M18BM-25E:B by Micron Technology

MT49H32M18BM-25E:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

11 mm

MT49H32M18BM-33:B by Micron Technology

MT49H32M18BM-33:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Power Supplies (V): 1.5/1.8,1.8,2.5;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

300 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

530 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

11 mm

MT49H32M18CBM-25IT:B by Micron Technology

MT49H32M18CBM-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT49H32M18CFM-18:B by Micron Technology

MT49H32M18CFM-18:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD SILVER; Memory Width: 18;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

R-PBGA-B144

e0

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

TIN LEAD SILVER

BALL

1 mm

BOTTOM

11 mm

MT49H32M18CFM-25:B by Micron Technology

MT49H32M18CFM-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 11 mm; Organization: 32MX18;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

R-PBGA-B144

e0

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

TIN LEAD SILVER

BALL

1 mm

BOTTOM

11 mm

MT49H32M18CFM-25E:B by Micron Technology

MT49H32M18CFM-25E:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B144; Memory Width: 18;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

R-PBGA-B144

e0

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

TIN LEAD SILVER

BALL

1 mm

BOTTOM

11 mm

MT49H32M18FM-25:B by Micron Technology

MT49H32M18FM-25:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Sequential Burst Length: 2,4,8;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e0

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Lead/Silver (Sn/Pb/Ag)

BALL

1 mm

BOTTOM

11 mm

MT49H32M18FM-25E:B by Micron Technology

MT49H32M18FM-25E:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e0

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

11 mm

MT49H32M18FM-33:B by Micron Technology

MT49H32M18FM-33:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA144,12X18,40/32;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

300 MHz

COMMON

R-PBGA-B144

e0

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

530 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Lead/Silver (Sn/Pb/Ag)

BALL

1 mm

BOTTOM

11 mm

MT49H64M9BM-25:B by Micron Technology

MT49H64M9BM-25:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Length: 18.5 mm;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

9

1

1

144

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX9

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

11 mm

MT49H64M9CBM-25E:B by Micron Technology

MT49H64M9CBM-25E:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

9

1

1

144

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX9

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.005 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

11 mm

MT49H64M9FM-25:B by Micron Technology

MT49H64M9FM-25:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

MULTI BANK PAGE BURST

20 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e0

18.5 mm

603979776 bit

DDR DRAM

9

1

1

144

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX9

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Lead/Silver (Sn/Pb/Ag)

BALL

1 mm

BOTTOM

11 mm

MT49H64M9FM-25E:B by Micron Technology

MT49H64M9FM-25E:B

Micron Technology

DDR DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Input/Output Type: COMMON;

MULTI BANK PAGE BURST

15 ns

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

e0

18.5 mm

603979776 bit

DDR DRAM

9

1

1

144

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX9

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

.055 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN LEAD

BALL

1 mm

BOTTOM

11 mm

MT16LSDF6464HY-13EG1 by Micron Technology

MT16LSDF6464HY-13EG1

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 67.585 mm;

DUAL BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N144

e4

67.585 mm

4294967296 bit

SYNCHRONOUS DRAM MODULE

64

1

1

144

67108864 words

64M

SYNCHRONOUS

65 Cel

0 Cel

64MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

31.88 mm

YES

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

.8 mm

ZIG-ZAG

30

3.8 mm

UPD48288209AFF-E24-DW1-A by Renesas Electronics

UPD48288209AFF-E24-DW1-A

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 400 MHz; Surface Mount: YES;

MULTI BANK PAGE BURST

AUTO REFRESH; IT ALSO REQUIRES AT 2.5V

400 MHz

COMMON

2,4,8

R-PBGA-B144

e6

18.5 mm

301989888 bit

DDR1 DRAM

9

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX9

3-STATE

PLASTIC/EPOXY

BGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY

1.8,2.5

Not Qualified

1.17 mm

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

TIN BISMUTH

BALL

.8 mm

BOTTOM

11 mm

UPD48288236AFF-E18-DW1-A by Renesas Electronics

UPD48288236AFF-E18-DW1-A

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 533 MHz; Memory Width: 36;

533 MHz

COMMON

R-PBGA-B144

e6

301989888 bit

DDR1 DRAM

36

144

8388608 words

8M

8MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY

1.8,2.5

Not Qualified

2,4,8

DRAMs

YES

CMOS

TIN BISMUTH

BALL

.8 mm

BOTTOM

UPD48288236AFF-E33-DW1 by Renesas Electronics

UPD48288236AFF-E33-DW1

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: BGA; Package Shape: RECTANGULAR; Memory Width: 36; JESD-30 Code: R-PBGA-B144;

300 MHz

COMMON

R-PBGA-B144

301989888 bit

DDR1 DRAM

36

144

8388608 words

8M

8MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY

1.8,2.5

Not Qualified

2,4,8

DRAMs

YES

CMOS

BALL

.8 mm

BOTTOM

MT16LSDF3264HY-13EG4 by Micron Technology

MT16LSDF3264HY-13EG4

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: DIMM; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

DUAL BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N144

e4

67.585 mm

2147483648 bit

SYNCHRONOUS DRAM MODULE

64

1

1

144

33554432 words

32M

SYNCHRONOUS

65 Cel

0 Cel

32MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.88 mm

YES

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

ZIG-ZAG

3.8 mm

UPD48288118AFF-E24-DW1-A by Renesas Electronics

UPD48288118AFF-E24-DW1-A

Renesas Electronics

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH; IT ALSO REQUIRES AT 2.5V

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

e6

18.5 mm

301989888 bit

DDR1 DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.8,2.5

Not Qualified

1.17 mm

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN BISMUTH

BALL

1 mm

BOTTOM

11 mm

UPD48288118AFF-E24-DW1 by Renesas Electronics

UPD48288118AFF-E24-DW1

Renesas Electronics

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 16777216 words;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH; IT ALSO REQUIRES AT 2.5V

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR1 DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.8,2.5

Not Qualified

1.17 mm

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT49H16M18CBM-25IT:B by Micron Technology

MT49H16M18CBM-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

.005 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H16M18BM-18:B by Micron Technology

MT49H16M18BM-18:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8; Technology: CMOS;

MULTI BANK PAGE BURST

AUTO REFRESH

533 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

830 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H16M18BM-25IT:B by Micron Technology

MT49H16M18BM-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Length: 18.5 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H16M18FM-25:B by Micron Technology

MT49H16M18FM-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Ports: 1; Output Characteristics: 3-STATE;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H16M18FM-25IT:B by Micron Technology

MT49H16M18FM-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 11 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H16M18FM-33:B by Micron Technology

MT49H16M18FM-33:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA144,12X18,40/32; Maximum Clock Frequency (fCLK): 300 MHz;

MULTI BANK PAGE BURST

AUTO REFRESH

300 MHz

COMMON

R-PBGA-B144

e0

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

530 mA

1.9 V

1.7 V

1.8

YES

CMOS

TIN LEAD SILVER

BALL

1 mm

BOTTOM

11 mm

MT49H32M9BM-25:B by Micron Technology

MT49H32M9BM-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

9

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX9

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H32M9BM-33:B by Micron Technology

MT49H32M9BM-33:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm; Maximum Clock Frequency (fCLK): 300 MHz;

MULTI BANK PAGE BURST

AUTO REFRESH

300 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

9

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX9

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm

MT49H32M9FM-25:B by Micron Technology

MT49H32M9FM-25:B

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 9; Input/Output Type: COMMON;

MULTI BANK PAGE BURST

AUTO REFRESH

400 MHz

COMMON

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

9

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX9

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

2,4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

11 mm