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FAST PAGE DRAM DRAM 4

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
SMJ44400-10HMM by Texas Instruments

SMJ44400-10HMM

Texas Instruments

SMJ44400-10HMM by Texas Instruments is a 1MX4 FAST PAGE DRAM with 1048576 words, operating at 5V. It features a max access time of 100ns, refresh cycles of 1024, and supports common I/O type. Ideal for military applications due to its MIL-STD screening levels and small outline package style.

FAST PAGE

100 ns

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

COMMON

R-CDSO-N20

17.78 mm

4194304 bit

FAST PAGE DRAM

4

1

1

20

1048576 words

1M

ASYNCHRONOUS

125 Cel

-55 Cel

1MX4

3-STATE

CERAMIC, METAL-SEALED COFIRED

SON

SOLCC20/26,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

1024

38535Q/M;38534H;883B

2.337 mm

NO

.004 Amp

DRAMs

75 mA

5.5 V

4.5 V

5

YES

CMOS

MILITARY

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

10.16 mm

SMJ44400-80HMM by Texas Instruments

SMJ44400-80HMM

Texas Instruments

SMJ44400-80HMM by Texas Instruments is a 1MX4 FAST PAGE DRAM with 1048576 words, operating at 5V. It features a max access time of 80ns, refresh cycles of 1024, and military-grade temperature range. Ideal for applications requiring high-speed memory operations in harsh environments.

FAST PAGE

80 ns

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

COMMON

R-CDSO-N20

17.78 mm

4194304 bit

FAST PAGE DRAM

4

1

1

20

1048576 words

1M

ASYNCHRONOUS

125 Cel

-55 Cel

1MX4

3-STATE

CERAMIC, METAL-SEALED COFIRED

SON

SOLCC20/26,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

1024

38535Q/M;38534H;883B

2.337 mm

NO

.004 Amp

DRAMs

85 mA

5.5 V

4.5 V

5

YES

CMOS

MILITARY

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

10.16 mm

TMS48C128-80DJ by Texas Instruments

TMS48C128-80DJ

Texas Instruments

TMS48C128-80DJ by Texas Instruments is a 128Kx8 FAST PAGE DRAM with 80ns access time, operating at 5V. It features 3-STATE output characteristics and consumes up to 80mA. Ideal for applications requiring high-speed memory operations in commercial temperature environments.

FAST PAGE

80 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-PDSO-J24

17.145 mm

1048576 bit

FAST PAGE DRAM

8

1

1

24

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ24/26,.34

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

512

3.76 mm

.002 Amp

DRAMs

80 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

NOT SPECIFIED

7.57 mm

TMS44165-70DZ by Texas Instruments

TMS44165-70DZ

Texas Instruments

TMS44165-70DZ by Texas Instruments is a 256Kx16 DRAM with 70ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for applications requiring fast page access in commercial temperature grades.

FAST PAGE

70 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-PDSO-J40

26.035 mm

4194304 bit

FAST PAGE DRAM

16

1

1

40

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ40,.44

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

1024

3.76 mm

NO

.001 Amp

DRAMs

120 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

NOT SPECIFIED

10.16 mm