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NO LEAD Varactor Diodes 10

Varactor Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Diode Cap Tolerance Minimum Diode Capacitance Ratio Nominal Diode Capacitance Diode Element Material Diode Type Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Minimum Quality Factor Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Variable Capacitance Diode Classification
SMV2025-040LF by Skyworks Solutions

SMV2025-040LF

Skyworks Solutions

SMV2025-040LF by Skyworks Solutions is a single hyperabrupt varactor diode with 4.65 pF nominal capacitance, suitable for ultra high frequency applications. It operates b/w -55 to 175 °C and has a max power dissipation of 0.25 W, making it ideal for surface mount designs in RF circuits.

20 V

SINGLE

9.68 %

2.2

4.65 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PBCC-N2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

.25 W

20 V

.02 uA

19 V

YES

NO LEAD

BOTTOM

NOT SPECIFIED

HYPERABRUPT

BBY5202LE6327XTMA1 by Infineon Technologies

BBY5202LE6327XTMA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

7 V

SINGLE

22.22 %

1.1

1.85 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-XBCC-N2

1

2

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

YES

NO LEAD

BOTTOM

HYPERABRUPT

BBY5302LE6327XTMA1 by Infineon Technologies

BBY5302LE6327XTMA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

SINGLE

9.43 %

1.8

5.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-XBCC-N2

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

YES

NO LEAD

BOTTOM

HYPERABRUPT

BB174LXYL by NXP Semiconductors

BB174LXYL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

7.85 %

8.45

19.75 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-N2

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

IEC-60134

30 V

Varactors

YES

NO LEAD

DUAL

ABRUPT

BB173LXYL by NXP Semiconductors

BB173LXYL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

32 V

SINGLE

10 %

13.5

38.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-N2

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

IEC-60134

32 V

Varactors

YES

NO LEAD

DUAL

ABRUPT

BB202LX,315 by NXP Semiconductors

BB202LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

8.59 %

2.5

30.85 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PBCC-N2

e3

1

2

85 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

Not Qualified

6 V

Varactors

YES

TIN

NO LEAD

BOTTOM

BB179LX,315 by NXP Semiconductors

BB179LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

7.848 %

8.45

19.75 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-N2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

30 V

Varactors

YES

TIN

NO LEAD

DUAL

BB178LX,315 by NXP Semiconductors

BB178LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

10 %

13.5

38.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PBCC-N2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

Not Qualified

32 V

Varactors

YES

TIN

NO LEAD

BOTTOM

BBY51-02LE6327 by Infineon Technologies

BBY51-02LE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

7 V

SINGLE

6.48 %

1.55

5.4 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-XBCC-N2

e3

1

2

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

7 V

Varactors

YES

MATTE TIN

NO LEAD

BOTTOM

HYPERABRUPT

BB187LX,315 by NXP Semiconductors

BB187LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 5 DIODES ARE AVAILABLE

32 V

SINGLE

7.71 %

11

31.75 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PBCC-N2

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

YES

NO LEAD

BOTTOM

ABRUPT