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ELLIPTICAL Diodes & Rectifiers 5

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Nominal Breakdown Voltage Case Connection Maximum Clamping Voltage Config Diode Cap Tolerance Minimum Diode Capacitance Ratio Maximum Diode Capacitance Nominal Diode Capacitance Diode Element Material Diode Type Maximum Dynamic Impedance Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Maximum Limiting Voltage Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity Maximum Power Dissipation Qualification Minimum Quality Factor Reference Standard Nominal Reference Voltage Nominal Regulation Current (Ireg) Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Maximum Voltage Tolerance Working Test Current
1N5617TR by Central Semiconductor

1N5617TR

Central Semiconductor

1N5617TR by Central Semiconductor is a fast recovery rectifier diode with a max reverse recovery time of 0.15 us and a max forward voltage of 1.2 V. It is commonly used in applications that require high-speed switching and low power loss.

FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

E-XALF-W2

e0

50 A

1

1

2

55 Cel

1 A

UNSPECIFIED

ELLIPTICAL

LONG FORM

Not Qualified

400 V

.5 uA

.15 us

400 V

NO

TIN LEAD

WIRE

AXIAL

1N5619TR by Central Semiconductor

1N5619TR

Central Semiconductor

1N5619TR by Central Semiconductor is a single rectifier diode with 600V reverse test voltage and 0.25us reverse recovery time. Ideal for fast recovery applications, it has a max output current of 1A and low forward voltage of 1.2V. The diode's package material is plastic/epoxy with an elliptical shape and tin lead terminal finish.

FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

E-PALF-W2

e0

50 A

1

1

2

1 A

PLASTIC/EPOXY

ELLIPTICAL

LONG FORM

Not Qualified

600 V

.5 uA

.25 us

600 V

NO

TIN LEAD

WIRE

AXIAL

1N5190TR by Central Semiconductor

1N5190TR

Central Semiconductor

1N5190TR by Central Semiconductor is a single rectifier diode with 600V peak reverse voltage and 3A output current. It has a fast recovery time of 0.4 us, making it suitable for applications requiring high-speed switching such as power supplies and inverters. The diode's package is made of plastic/epoxy with tin lead terminal finish in an axial configuration.

FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

E-PALF-W2

e0

80 A

1

1

2

3 A

PLASTIC/EPOXY

ELLIPTICAL

LONG FORM

Not Qualified

600 V

.4 us

NO

TIN LEAD

WIRE

AXIAL

SS3612 by Sensitron Semiconductor

SS3612

Sensitron Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ELLIPTICAL;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

E-XALF-W2

1

1

2

1 A

UNSPECIFIED

ELLIPTICAL

LONG FORM

NOT SPECIFIED

Not Qualified

5 us

NO

WIRE

AXIAL

NOT SPECIFIED

JANTX1N5811USTR by Sensitron Semiconductor

JANTX1N5811USTR

Sensitron Semiconductor

JANTX1N5811USTR diode by Sensitron Semiconductor is a single-config, surface-mount rectifier with a max reverse recovery time of 0.03 us and max output current of 6A. Ideal for ultra-fast recovery applications, it operates b/w -65 to 175 °C and has a max repetitive peak reverse voltage of 150V.

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.925 V

E-LELF-R2

e0

125 A

1

1

2

175 Cel

-65 Cel

6 A

GLASS

ELLIPTICAL

LONG FORM

Not Qualified

MIL-19500

150 V

5 uA

.03 us

YES

TIN LEAD

WRAP AROUND

END