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Comchip Technology Bridge Rectifier Diodes 16

Bridge Rectifier Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
DF201S-G by Comchip Technology

DF201S-G

Comchip Technology

DF201S-G by Comchip Tech is a BRIDGE RECTIFIER DIODE with 4 elements, max output current of 2A, and max repetitive peak reverse voltage of 100V. It operates at up to 150°C, suitable for applications requiring high efficiency rectification in compact spaces.

BRIDGE, 4 ELEMENTS

BRIDGE RECTIFIER DIODE

1.1 V

1

60 A

4

150 Cel

2 A

260

100 V

Bridge Rectifier Diodes

YES

30

DB107S-G by Comchip Technology

DB107S-G

Comchip Technology

Comchip Technology's DB107S-G is a bridge rectifier diode with 4 elements, 1000V reverse test voltage, and 1A max output current. It is used in applications requiring high voltage rectification such as power supplies and battery chargers.

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PDSO-G4

50 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

1000 V

10 uA

1000 V

YES

GULL WING

DUAL

DF10ST-HF by Comchip Technology

DF10ST-HF

Comchip Technology

BRIDGE RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 1000 V; Maximum Non Repetitive Peak Forward Current: 30 A; Maximum Forward Voltage (VF): 1.1 V; No. of Elements: 4;

BRIDGE, 4 ELEMENTS

BRIDGE RECTIFIER DIODE

1.1 V

30 A

4

150 Cel

1 A

1000 V

Bridge Rectifier Diodes

YES

GBJ2510-03-G by Comchip Technology

GBJ2510-03-G

Comchip Technology

Comchip Technology's GBJ2510-03-G is a BRIDGE RECTIFIER DIODE with 4 elements, capable of handling up to 25A output current and 1000V peak reverse voltage. It operates at a max temperature of 150°C, making it suitable for high-power applications like industrial power supplies and motor drives.

BRIDGE, 4 ELEMENTS

BRIDGE RECTIFIER DIODE

1.1 V

350 A

4

150 Cel

25 A

1000 V

Bridge Rectifier Diodes

NO

GBJ2510-04-G by Comchip Technology

GBJ2510-04-G

Comchip Technology

Comchip Technology's GBJ2510-04-G is a Bridge Rectifier Diode with 4 elements, max VF of 1.1V, and max output current of 25A. Operating at up to 150°C, it has a max repetitive peak reverse voltage of 1000V. Ideal for power supply applications requiring high current rectification in challenging environments.

BRIDGE, 4 ELEMENTS

BRIDGE RECTIFIER DIODE

1.1 V

350 A

4

150 Cel

25 A

1000 V

Bridge Rectifier Diodes

NO

GBJ2510-05-G by Comchip Technology

GBJ2510-05-G

Comchip Technology

Comchip Technology's GBJ2510-05-G is a bridge rectifier diode with 4 elements. It has a max forward voltage of 1.1V and can handle an output current of 25A. With a max operating temperature of 150°C, it is suitable for various applications requiring high voltage and current rectification.

BRIDGE, 4 ELEMENTS

BRIDGE RECTIFIER DIODE

1.1 V

350 A

4

150 Cel

25 A

1000 V

Bridge Rectifier Diodes

NO

GBJ2510-06-G by Comchip Technology

GBJ2510-06-G

Comchip Technology

Comchip Technology's GBJ2510-06-G is a Bridge Rectifier Diode with 4 elements, capable of handling up to 25A output current and 1000V peak reverse voltage. It operates at a max temperature of 150°C, making it suitable for high-power applications requiring efficient rectification.

BRIDGE, 4 ELEMENTS

BRIDGE RECTIFIER DIODE

1.1 V

350 A

4

150 Cel

25 A

1000 V

Bridge Rectifier Diodes

NO

GBJ2510-G by Comchip Technology

GBJ2510-G

Comchip Technology

Comchip Technology's GBJ2510-G is a BRIDGE RECTIFIER DIODE with 4 elements, capable of handling up to 25A output current and 1000V peak reverse voltage. With a max forward voltage of 1.1V, it is ideal for high-power applications requiring efficient rectification in electronic circuits.

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

350 A

4

150 Cel

25 A

NOT SPECIFIED

1000 V

Bridge Rectifier Diodes

NO

NOT SPECIFIED

GBU2506-HF by Comchip Technology

GBU2506-HF

Comchip Technology

GBU2506-HF by Comchip Technology is a bridge rectifier diode with 4 elements, max output current of 4.2A, and max repetitive peak reverse voltage of 600V. It is used in applications requiring high voltage rectification such as power supplies and industrial equipment due to its UL recognized standard and silicon diode element material.

600 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSFM-T4

350 A

4

1

4

150 Cel

-55 Cel

4.2 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

UL RECOGNIZED

600 V

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

DF005ST-G by Comchip Technology

DF005ST-G

Comchip Technology

DF005ST-G by Comchip Technology is a bridge rectifier diode with 4 elements, max output current of 1A, and peak reflow temperature of 260°C. It is used in applications requiring small outline package style and UL recognized reference standard compliance.

50 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PDSO-G4

1

30 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UL RECOGNIZED

50 V

Bridge Rectifier Diodes

YES

GULL WING

DUAL

30

DF10ST-G by Comchip Technology

DF10ST-G

Comchip Technology

DF10ST-G by Comchip Technology is a bridge rectifier diode with 4 elements, max output current of 1A, and max repetitive peak reverse voltage of 1000V. It is designed for applications requiring small outline surface mount packages in electronic circuits operating b/w -55°C to 150°C.

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PDSO-G4

1

30 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UL RECOGNIZED

1000 V

Bridge Rectifier Diodes

YES

GULL WING

DUAL

30

DF01S-HF by Comchip Technology

DF01S-HF

Comchip Technology

DF01S-HF by Comchip Tech is a bridge rectifier diode with 4 elements, max output current of 1A, and max repetitive peak reverse voltage of 100V. It operates b/w -55°C to 150°C, ideal for applications requiring small outline surface mount diodes like power supplies and battery chargers.

100 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PDSO-G4

30 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

UL RECOGNIZED

100 V

YES

GULL WING

DUAL

NOT SPECIFIED

GBU2506-G by Comchip Technology

GBU2506-G

Comchip Technology

GBU2506-G by Comchip Tech is a bridge rectifier diode with 4 elements, max output current of 25A, and max repetitive peak reverse voltage of 600V. It operates b/w -55°C to 150°C, ideal for applications requiring high voltage rectification in electronic circuits.

600 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PSFM-T4

350 A

4

1

4

150 Cel

-55 Cel

25 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

UL RECOGNIZED

600 V

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

KBU3510-G by Comchip Technology

KBU3510-G

Comchip Technology

KBU3510-G by Comchip Technology is a bridge rectifier diode with 4 elements, capable of handling up to 35A output current and 1000V breakdown voltage. It operates b/w -55°C to 150°C, making it suitable for applications requiring high power rectification in various electronic circuits.

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PSFM-W4

400 A

4

1

4

150 Cel

-55 Cel

35 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

UL RECOGNIZED

1000 V

Bridge Rectifier Diodes

NO

WIRE

SINGLE

30

DB107ST-G by Comchip Technology

DB107ST-G

Comchip Technology

The Comchip Technology DB107ST-G is a bridge rectifier diode with 4 elements, capable of handling up to 1A output current and 1000V breakdown voltage. It is designed for applications requiring small outline surface mount packages, such as power supplies and battery chargers. Operating temperature ranges from -55°C to 150°C, meeting UL standards.

1000 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

1.1 V

R-PDSO-G4

30 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

UL RECOGNIZED

1000 V

Bridge Rectifier Diodes

YES

GULL WING

DUAL

NOT SPECIFIED

BR1002SG-G by Comchip Technology

BR1002SG-G

Comchip Technology

The Comchip Technology BR1002SG-G is a UL recognized bridge rectifier diode with 4 elements, capable of handling up to 10A output current and 200V max repetitive peak reverse voltage. Its silicon material and flange mount package make it suitable for industrial applications requiring reliable rectification in temperatures ranging from -55°C to 150°C.

200 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-XUFM-W4

175 A

4

1

4

150 Cel

-55 Cel

10 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

UL RECOGNIZED

200 V

NO

WIRE

UPPER

NOT SPECIFIED